78-1350: A stable volatile platinum precursor for ALD and CVD applications

(Trimethyl)methylcyclopentadienylplatinum(IV), 99%

The extremely versatile platinum precursor 78-1350 is readily available in the Strem Catalog.  This low melting (30-31^oC) off white solid with high volatility (subl. 23°C/0.053mm) is widely used in CVD and ALD applications due, in part, to its simplicity of elements (only C,H and Pt), and moderate decomposition temperatures.   A low temperature method for deposition using such a volatile, but stable platinum precursor, is highly advantageous as long as they are free of extemporaneous atoms from ligands.  Thin films of platinum are used extensively in microelectronic device processing and electrodeless metal plating.¹   Platinum films of high purity (>99 atom %) and high crystal quality are obtained at 180^o C from cyclopentadienyltrimethylplatinum (78-1350).²   The need for a liquid precursor for platinum vapor deposition to afford better control over vaporization for thin film manufacturing has led to the study of 78-1350, a low melting substance.

Catalog # 78-1350 (Trimethyl)methylcyclopentadienylplatinum(IV)

Ultra-thin platinum films deposited on oxide substrates find a number of applications in microelectronics and nanotechnology, due to the fact that platinum exhibits very good electronic properties, catalytic activity and is chemically stable. The Atomic Layer Deposition (ALD) technique is a relatively recent, self-limiting technique capable of accurate and uniform deposition of thin platinum films.  Using 78-1350 as a precursor, ultra-thin metal layers having thickness at the nanoscale level with high aspect ratios can be deposited. Nanostructured metal films have been widely studied for their roles in sensing, catalysis, and energy storage.³ For example, application of nanostructured Pt films to electrochemical sensing applications for the non-enzymatic sensing of glucose.³   78-1350 is also a highly efficient organometallic photo-initiator for Hydrosilyation.⁴ and is used in the UV curing of silicon polymers. Plasma-assisted ALD processes were developed for the deposition of platinum films at room temperature. High-quality, virtually pure films with a resistivity of 18-24 μΩ cm were obtained for processes consisting of 78-1350 dosing, O2 plasma exposure, and H2 gas.⁵ Platinum (ALD) on the surface of multi-layered carbon nanotubes gives catalytic activity and durability to the ALD-Pt catalyst electrode in proton exchange membrane fuel cells.⁶ 78-1350 deposits platinum films which can be fully purified by an electron-beam assisted approach using H₂O vapor at room temperature, enabling high purification rates.⁷ Platinum ALD from 78-1350 and O2 gas has been considered as a model system for noble metal ALD.⁸

References:

1)      J. Am. Chem. Soc., 1989, 111, 8779.

2)      Appl. Phys. Lett., 1988, 53, 1591. 

3)      Adv. Funct. Mater., 2010, 20, 3099. 

4)      Inorg. Chem., 2004, 43, 6869.

5)      Chem. Mater., 2013, 25, 1769.

6)      Electrochim. Acta., 2012, 75, 101.

7)      J.Phy. Chem. C., 2014, 118, 14009.

8)      Chem. Mater., 2012, 24, 1752.

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